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| NTE14 Silicon PNP Transistor High Power, Low Frequency Driver Features: D High Power Compact FTR Package: PC = 750mW D High Breakdown Voltage: VCEO = 80V Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +135C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +135C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector Saturation Voltage Transition Frequency Output Capacitance Symbol Test Conditions Min 80 80 5 - - 120 - - - Typ Max Unit - - - - - - 0.2 100 14 - - - 0.5 0.5 270 0.4 - 20 V V V A A - V MHz pF V(BR)CEO IC = 2mA V(BR)CBO IC = 50A V(BR)EBO IE = 50A ICBO IEBO hFE fT Cob VCB = 50V VEB = 4V VCE = 3V, IC = 100mA VCE = 10V, IE = 50mA VCB = 10V, IE = 0, f = 1MHz VCE(sat) IC = 500mA, IB = 50mA .102 (2.6) .280 (7.11) E C B .185 (4.7) .100 (2.54) .051 (1.29) .138 (3.5) .022 (0.55) |
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